The present invention provides compounds of the formula:and pharmaceutically acceptable isomers, salts, hydrates, solvates, and prodrug derivatives thereof, wherein R1, R6, R7, R8, Pg, and n are those defined herein. An electrostatic discharge-protected MOS structure includes a semiconductor substrate of a first type, a first well of the first type formed in the semiconductor substrate, and a second well of a second type disposed adjacent to the first well. The bubbles at least temporarily reduce execution of operations in one or more subsystems of the processor based at least partially on a comparison of a first value and one or more clamping threshold values. The system includes means for damping vibrations between the nozzles with a gap between the means for damping vibrations.