A semiconductor memory device, a method of manufacturing the same, and a cell array of a semiconductor memory device are provided. Image data captured by a solid-state imaging element capable of performing imaging at a high resolution and a high frame rate is supplied to a memory control unit. Multiple profiles are associated with the data transmission path, each profile comprising at least one quality of service parameter, or QoS parameter. Using a chip-on-board process, the bare silicon die for each component is wire bonded directly to a printed circuit board assembly, allowing at least four LEDs to be grouped closely together in a space smaller than that occupied by a factory-made, single-packaged LED. These chromatographic columns are formed using conventional micromachining techniques, and allow packed columns having lengths on the order of a meter to be fabricated with a footprint on the order of a square centimeter.