A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The device comprises a base comprising at least one mounting location comprising first and second electrical base connectors. In such a way, the flow rate of the cooling air flow in the cooling air channel remains substantially constant, resulting in optimized engine cooling. The small detection plate comprises a chip with a coupling loop and together with the antenna structure forms a textile transponder. The aggregation of the primary crystallites into a secondary crystal structure can allow for an unexpectedly large mesoporous surface area for the ZSM-5 crystals.