The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0. The first frame comprises a bottom surface, two first sidewalls extending from opposite edges of the bottom surface, and two second sidewalls arranged between the two first sidewalls, wherein two gaps are formed in the first frame. A packaging portion includes the first visual element section and the second visual element section, where the physical distress and graphical distress are spatially adjacent, and where the physical distress and graphical distress are related to the product.