A storage device attachable to a vehicle roof rack having a removable boat. The inner shield includes a plurality of side walls that form a center opening through which electron beams pass, and at least one degaussing coil mounted at outer surface of the tube. The stacked gate structure has a first stressed film layer of large grain size Si or SiGe over the gate dielectric layer, a second stressed film layer of strained SiGe or strained Si:C over the first stressed film layer, and a semiconductor or conductor such as p-Si over the second stressed film layer.