A SRAM cell structure includes a first N type switch, a second N type switch, a first storage node, and a second storage node. A twin-wire electric arc process is performed to melt the wire tips, and metal melt is formed. There is a gap between the enhancement implant region and the P-N junction. The cover is configured to fit over the housing to enclose the chamber. An argon plasma coagulation sleeve is placed on the cutting end of one or both sides of the scissors and is connected to the flexible tubing and wire through the coaxial connector.