A method of fabrication of one or more ultra-miniature piezoresistive pressure sensors on silicon wafers is provided. The invention conducts a signal integrity analysis on an IC design; identifies any field effect transistor that causes a signal integrity failure in the case that the IC design fails the signal integrity analysis; and modifies an edge of a failing FET that is closer than a threshold distance to a well edge. The first interface may be adapted to couple with the first computing device. The values of content admission control, network admission control, and data admission control are then calculated and used in the service admission control formula to determine the service admission control value for the application. The first and the second conductive regions are in direct electrical contact at their thin portions and form the sublithographic contact area.