A memory device having banks of sense amplifiers with two different types of sense amplifiers is provided. The lead terminal is inserted and mounted in the through hole. The invention also relates to a fluid receiver intended in particular for implementing such a method, with application to the air conditioning of motor vehicles. The second domain processors include a second domain control processor for controlling the second processing of the second domain. The method may include forming at least one interconnection layer having a low dielectric constant insulating film and an interconnection buried in the low dielectric constant insulating film, forming a trench or a hole extending in the interconnection layer, performing heat treatment for the interconnection layer having the trench or the hole, and burying a material in the trench or the hole.