In a semiconductor device, first gate electrodes contributing to transistor operations and second gate electrodes not contributing to the transistor operations each have the same gate length, share the common gate length direction, and are arranged in the same pitch. The method includes providing a first layer including a mounting region with an integral boss tower attached to a stiffener by one or more positioning tabs; attaching a second layer including a spring region to an interface between the mounting region and the stiffener; attaching a flexure to the stiffener; and removing the positioning tabs. The shredded foamfiber materials may be modified as required to provide different density andor firmness characteristics to different portions of the product.