Provided is a semiconductor memory device in which a plurality of first and second data lines coupled to a memory cell array are alternately arranged. The first catalyst bed with its associated ammonia injector preferably targets removing only about 80 to about 95% percent of the NOx in the vehicle exhaust. Subsequently, the bumps are heated to a temperature lower than a melting point of the bumps, and the substrate and the electronic component are compression bonded via the bumps. Prior to a first trigger, a first group of memory cells are programmed together with a second group of memory cells.