A scanning optical system includes a deflector for deflecting a laser light flux from a light source and a second imaging optical system for focusing the laser light flux deflected by the deflector on a target scanning surface. Specifically, the integrated semiconductor circuit includes a FinFET and a planar single gated FET located atop a buried insulating layer of an silicon-on-insulator substrate, the planar single gated FET is located on a surface of a patterned top semiconductor layer of the silicon-on-insulator substrate and the FinFET has a vertical channel that is perpendicular to the planar single gated FET. In this case, the RF anti-reflection coating can be a layer of silicon dioxide, which can be sandwiched between two IR anti-reflection coatings designed to minimize IR reflections between the surrounding air and the RF anti-reflection coating and between the RF anti-reflection coating and the prism material, respectively.