A semiconductor laser device includes an active layer and a layer greater in bandgap energy than the active layer and having a stacked-layer structure mainly of gallium-nitride-based semiconductor for lasing. The terminal includes a U-shape portion, an extending portion extending outside the receiving recess portion a first sidewall facing outside, and a connecting portion. The delay in sampling the center of k-space following sampling of a peripheral region of k-space maintains the steady state of the MR signal and reduces the image intensity variation caused by eddy current and gradient hysteresis. In some embodiments, the appliance comprises a flexible chamber and a collapsible frame that may be collapsed while the appliance is not in use. The third pod is disposed between and supported above the first face by the first and second pods by the at least one suspension member so that a gap exists between a bottom surface of the third pod and the first face of the base structure. The blends may have improved physical properties andor processing characteristics.