A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In. 2, and a transfer member which is pressed against the image carrier by a pressing force having a total load of 150 g to 1500 g and a surface load of 10 to 150 gcm2 at the time of transfer. At least two separate processes are provided, including a long transition for initial pairing or re-pairing and a short transition for re-establishing a connection after devices have already been paired. Candidate results are also generated based on the match-values. The suspected problems represent those problems that could have generated errors to produce the received error reports compatible with the propagations in the fault tree.