A phase change memory is provided with a write data register, an output data selector, a write address register, an address comparator and a flag register. The system includes a guidewire slideable through a wire guide included in a distal region of a support wire. An estimated etch time duration is determined for removing the amount of the material upon exposing the silicon workpiece to the spontaneous etchant for the estimated etch time duration. A front support rib is installed in a front part of the bag body such that the upper end of the front support rib is held in a rib support hole provided in the head of the bag body and the lower end of the front support rib is held in a rib support piece provided in the bag body. For a brake activation intensity variable corresponding to a predefined non-activation intensity variable, the plunger control device determines a fill level variable different from an empty state as the setpoint fill level variable, and outputs a plunger control signal corresponding to the determined setpoint fill level variable to the plunger such that the plunger is at least partially filled.