Methods of forming a gate dielectric layer, and a composite gate dielectric layer, for a thin film transistor, has been developed. Chemical Formula 1X\u2014Q1\u2014Y1\u2014SO3\u2212M+\u2003\u2003X\u2014Q1\u2014Y1\u2014SO3\u2212A+\u2003\u2003. The uninsulated outer surface and one of the conductive elements are insulated from the other conductive element. , where x is greater than 0, but smaller than 1. An anisotropic dry etching procedure is then performed on the silicon oxide layer resulting in the definition of offset silicon oxide spacers on the sides of the polysilicon gate structure. The data may not be stored in the replication log if the write request does not overlap with one or more earlier write requests to the volume.