An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 1011cm2 or below and a crystallinity of 90 seconds or below in full width at half maximum of an X-ray rocking curve at reflection. The processing system is configured to display a graphical bandwidth selection indicium on the display device. The system comprises an imaging device and an image processing device. A computer system adjusts the depth index as a function of wireline tension measured by the cable tension meter. The method also comprises performing a remote plasma treatment on the low-k dielectric layer and the conductive layer.