The semiconductor device according to one embodiment of the present invention includes: a semiconductor substrate; and a first area and a second area which are respectively provided on the semiconductor substrate. The memory cell includes a charge storage layer provided above a substrate, a first semiconductor layer formed on a top surface of the charge storage layer via an insulating layer, and a first low resistive layer formed on a top surface of the first semiconductor layer and having resistance lower than that of the first semiconductor layer. The need to tighten nuts by hand or with hand tools is therefore eliminated. The IRD 103 judges a possibility of the reservation from the answer information.