A three-dimensional semiconductor device includes a semiconductor substrate, vertical channel structures arranged on the semiconductor substrate in a matrix, a P-type semiconductor layer disposed at the semiconductor substrate to be in direct with the vertical channel structures, and a common source line disposed at the semiconductor substrate between the vertical channel structures. Each of the number of lines corresponds to a value of information, such as angle degrees relative to the horizon line of the sky in the context of avionics, for example. The process features a high degree of freedom in selecting forms of filler and in selecting the organosilane and gives a finished rubber powder in which a silicatic filler and an organosilane have undergone complete chemical reaction. A user may modify the first data field and the system and method may identify a dependency between the first data field and at least a second data field. A linear rectifying circuit as a major technique connects to the output of the power factor corrector to detect power dissipation and represent the result in a display, thus user can take necessary measures when a computer draws excessive power. One example method comprises limiting airflow to the engine in response to a spark timing retarded beyond a spark retard threshold, the limiting airflow to the engine reducing engine torque output and compensating for the reduction in engine torque output by adjusting a transmission operating parameter.