An exemplary embodiment includes a semiconductor device. Preferably, the core is dual-layered having has a foam inner core and surrounding thermoset or thermoplastic outer core layer. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. A lift bridge is adapted to be positioned on the forward ends of the lift arms whereby the power unit is operable for use as a load-lifting jack; and the bridge is further adapted to be displaced from the forward ends of the lift arms whereby the power unit is operable for use with the jack stand.