A non-volatile memory device comprises a substrate with a dielectric layer formed thereon. A plurality of layers of products, each having multiple items in separate packages, each layer having a carrier with the separate packages being secured to and extending from the carrier. An optional protection section is provided on at least one side of the material. When the residual goes to zero, by definition, the steady state error in the position state goes to zero; and to the extent that the model matches the plant, the velocity state also approaches zero such that the steady state error in the predicted states are substantially eliminated, allowing for improved control. 5 wt % of an alkaline agent; from 0 to 5 wt % of elemental sulfur; and from 50 to 90 wt % of water.