1460514717-96d699a7-d2d8-4e1a-bcd6-ce07d278886c

A photolithography method is provided which includes: arranging a layout topography in a first mask and a second mask in such a way that at least a layout pattern of the layout topography is defined by an overlap area. Circularly or elliptically polarized light sources are passed via up to three polarizing elements. The identifying component visually conveys information about at least one of: the electronic identifying device, and the component to which the band is adapted to be coupled. The system may thereby reduce or eliminate the need for post processing by transcriptionists or dictation authors. The range of the electric field covers the target zone, and the electric field strength ranges from 100 Vm to 1000 Vm. The sealing agent may be added with the ball sealers, after the ball sealers, or both.