The present disclosure relates to techniques for providing data redundancy after reducing memory writes. A shear block is affixed to each end of a rail. A dielectric film capacitor includes a lower electrode formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film. A second input of the comparator is coupled to a data voltage node.