A pulse is applied through a capacitive touch key sensor to a sampling capacitor of an analog-to-digital converter. The end cap terminates one end of the male body. In such an SOI substrate, adhesion between a buried insulating layer as an under layer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability. The anode active material layer has a thickness from about 30 micrometers to about 100 micrometers both inclusive. The monitoring module receives a condition monitoring request from the control module, receives a predetermined value from the control module, and notifies the control module when a condition is satisfied based on a comparison of the predetermined value and one of the filtered pressure and a parameter determined based on the pressure signal.