A vertical FET structure with nanowire forming the FET channels is disclosed. The open end comprises an interior diameter sized and shaped to accept a cylindrical conduit. The first flexible hinges are disposed symmetrically about a longitudinal centerline of the absorbent article to define a central absorbent portion having an absorbent layer therebetween. The actuators may move the compensation ring with respect to the axis of rotation of the shaft in a direction substantially opposite the direction of the imbalance. A plurality of bars extend from the first wall to the second wall. The device includes one or more hose sections disposed in the fluid-conveying line, and at least one spring disposed in at least a portion of each of the hose sections.