A gate formation method of flash memory devices includes performing a nitrogen anneal process in a Rapid Thermal Processing apparatus to crystallized a tungsten silicide film used as a control gate electrode, which results in reduced sheet resistance of a control gate electrode. The sheet product is a polymeric material and includes a heavy loading of high molecular weight metal particles. The DID Operator may further be coupled to a DID System that calculates digital identities for Originators. Burner gas is conducted to the space between the bowl interior and the underside of the base plate.