A non-planar semiconductor structure includes mixed n-and-p type raised semiconductor structures, e. The exhaust gasses travel from the exhaust manifold, first passing through a flow control valve and then through a measuring orifice before entering the intake manifold. The thermosetting binder is advantageously a hydroxylated thermosetting binder, suitably an epoxy resin. The wet etching method can not damage the separated epitaxial substrate, thus the substrate can be reused. In shutdown, a purge material from the containment vessel is introduced into the first, and preferably the second, process unit.