An object of the present invention is to provide a semiconductor device having a structure which can realize not only suppressing a punch-through current but also reusing a silicon wafer which is used for bonding, in manufacturing a semiconductor device using an SOI technique, and a manufacturing method thereof. The first and second fins are sealed to each other by a plurality of spaced preseals. A signal representative of the extracted information is generated and transmitted to a remote communications device by way of a communication channel.