A semiconductor memory device according to an embodiment includes a control circuit configured to apply a first voltage to a selected first line, apply a second voltage to a selected second line, and apply a third voltage and a fourth voltage to a non-selected first line and a non-selected second line in a setting operation, respectively. In an embodiment, the system includes a bone plate, a bone screw and a ring. 0% by weight; wherein a manganese element content of the ferrite particle is from about 0. The guide members slide along partition walls of a housing ahead of the crimpers to ensure proper alignment.