Methods for depositing extremely low resistivity tungsten in semiconductor processing are disclosed herein. The method comprises: selecting the PGR; selecting a route; selecting an ad; selecting a mobile carrier of the selected ad; targeting the PGR by using the selected carrier of the selected ad; wherein the selected carrier of the ad follows the selected route; and estimating revenue stream originated from the targeted PGR and caused by exposure to the selected ad. Each rod connected to the handle is divided into first and second rod sections, the second rod section having a flexible pulling rope and a flexible locating pin.