A semiconductor device fabrication method deposits a dielectric stress-canceling film on oxide films formed on the surfaces of a semiconductor substrate and its isolation trenches, and partly etches the dielectric stress-canceling film to leave a dielectric base film inside each trench and a dielectric top film outside each trench. The stylus includes a pen stem, a metal plating coat adhered to the pen stem, and a conductive rubber stylus tip attached with the pen stem such that the stylus tip is in direct contact with the metal plating coat. The system also includes at least one detector configured to detect scattered x-rays after the x-rays have passed through the object. The fastening means is assembled on the first protruding section of the base and at least has a soldering portion.