Implemented are a semiconductor device comprising a trench type capacitor having such a structure that a soft error tolerance is excellent, a contact resistance between an electrode and a metal wiring has a small value, a fringe capacitance on an end is reduced and area penalty is not increased, and a method for manufacturing the semiconductor device. The present invention provides an isolated refuge cabin of a simple structure, which can be operated safely and easily to effectively separate the exterior environment of the mining accident areas and provide conditions for survival for human beings involved in the mine accidents. The PCD element has a plurality of partially bonded diamond or diamond-like crystals forming at least one continuous diamond matrix, and the interstices among the diamond crystals forming at least one continuous interstitial matrix containing a catalyzing material.