In a semiconductor device having a heat radiation plate, the tips of inner leads connected to a semiconductor chip have a lead width w and a lead thickness t, the width being less than the thickness. The semiconductor structure includes a substrate, a high k dielectric layer disposed over the substrate, and a gate layer over the high k dielectric layer. Elongated panels such as inverted U-shaped panel, elongated panel, and a second elongated panel, all include a stiffening foam layer which, together with rectangular panels and, define an overall truncated pyramid shape on the packing door.