Single crystal SiC, having no fine grain boundaries, a micropipe defect density of 1cm2 or less and a crystal terrace of 10 micrometer or more is obtained by a high-temperature liquid phase growth method using a very thin Si melt layer. A request for a transient address corresponding to mobile document processing operations is first received from an associated user. The apparatus includes a kinetic condition setting unit and a particle motion computing unit. An alternate embodiment is for a slide drawer opening security container differing only in the configuration of an enclosure which contains a sliding drawer under the console instead of the lid opening on the enclosure top.