Technical ProblemIt is an object to provide a device for a single-crystal growth and a method of a single-crystal growth in which even when materials that are different in, for example, a melting point or a diameter are to be grown, the conditions for the stable growth of a single crystal can be obtained and a high-quality single crystal having a desired diameter can hence be grown. 9 and which comprises 10 to 40% flour, from 20 to 30% fat, from 10 to 30% water, up to 2% salt and a mixture of at least one carbohydrate with low or zero sweetening power in a sufficient quantity to reduce the Aw of said dough to a desired value of less than 0. The resist mask has a resist as an opaque element, and can afford mask patterns undergoing little change even with an increase in the number of wafers subjected to exposure processing. As the elastic member interacts with the piston in different clearance regions, variable frictional forces are applied to the piston. The gate insulating film has a thermal oxide film formed on the monocrystalline semiconductor layer, and at least one vapor-deposited insulating film formed on the thermal oxide film.