A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A load is switchable to the elongated conductors. A magnitude of the cage frequency at a servo sector n0 is calculated based on a difference between the read magnitudes of the servo burst closures at servo sectors nc and nc1, and a phase of the cage frequency is calculated based on the magnitude of the written-in cage frequency at servo sector n0. The method also includes receiving an input from the desired mobile communication device information representative of an acceptance to receive the information representative of the desired contact information, and transmitting to the desired mobile communication device information representative of the desired contact information.