A reference stage is provided in order to compensate for manufacturing tolerances, for example relating to the threshold voltage of a transistor. The status of the SDRAM after a radiation test are calculated. The felt is attached adhesively on a body of an acting member and comes into contact with the surface of an operating member such as a fixing roller or a developing roller. Furthermore, a method for forming the nonvolatile memory device is provided with simplified processes. Compensation zones of the second conduction type that are formed in the second layer are provided. The presence of small amounts of the compound according to Formula I increases the conductivity of metallic layers or patterns formed from the metallic nanoparticle dispersions at moderate curing conditions.