The invention relates to a semiconductor device comprising a semiconductor body which is provided with an active semiconductor region which borders on a surface of said semiconductor body, which active semiconductor region is provided with a non-volatile memory cell comprising a source zone and a drain zone, a select gate, and a stacked gate structure comprising a floating gate and a control gate. The material may be a semiconductor material, such as a cadmium chalcogenide. The substrate itself may be magnetic thereby eliminating a separate bias magnet.