To provide a semiconductor device with improved reliability which includes a metal silicide layer formed by a salicide process. After forming a patterned photoresist layer over a wafer, a surface treatment step is performed to the photoresist layer by using at least one reaction gas comprising hydrogen bromide or hydrogen iodide to form a hardened layer over the surface of the photoresist layer. This Abstract is submitted with the explicit understanding that it will not be used to interpret or to limit the scope or the meaning of the claims. This list includes fewer than all RF channels evaluated by the cell selection. The system includes an electrically driven vacuum pump selectively routing air to an air intake system upstream and downstream of a turbocharger. The frame slidably engages with the rotating element.