1460655958-722a9738-24f4-4744-aa9f-b3a912c46cb1

There is provided a bulk bias voltage VBB level detector in a semiconductor memory device capable of improving tWR fail generated at a low temperature by compensating a temperature variance. Motion blur caused by movement of the camera or by movement of an object within the scene being photographed is reduced by selecting appropriate exposure parameters. For example, the resonator is decoupled from the whole oscillator circuitry by connecting the oscillator to a tap on the resonator which reflects the oscillator as a lighter load across the entire resonator.