A two-transistor non-volatile memory cell is formed in a semiconductor body. R1 is selected from a group consisting of NH2, NHR, N2, hetrocycles such as furan, thiophene, pyrole, prydyl, piprazine, morphine and R2 is O and S separately. The second frame is pivoted by an adjustment member so that it can turn properly. A second reciprocating piston is arranged to apply a second force to the wedge lock that effects a relative sliding motion between the wedge lock and the tapered surface in a second direction that is opposite to the first direction. In another embodiment, the application is directed to an inflatable system comprising a substantially fluid impermeable bladder and a fluid controller comprising pump in fluid communication with the bladder. The resulting output voltage Vpp from the word line voltage regulation system will then vary in accordance with the cell access device parametrics so as to guarantee a full high level will always be written into the DRAM cell.