A method includes presenting, on a display, a diagram. The first MOSFET includes a first gate insulating film formed on a semiconductor substrate and having a relatively large thickness and a first gate electrode composed of a polysilicon film formed on the first gate insulating film. In addition, the etch rate of the sacrificial layer should be sufficiently higher than that the ultra thin layer so that the sacrificial layer can be selectively removed in the presence of the ultra thin layer after recrystallization. The puncture sealing layer is press attached to the tire inner wall surface by a recovery force of the compressed sponge layer.