This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. wherein R1 and R2 each independently represent an ester bond-containing C4-18 group, a C4-18 alkyl group, a C4-18 alkenyl group or a C4-18 alkynyl group, with the proviso that the multiple R2 groups may be the same or different. The system includes an optical imager adapted to read an encoded symbol character comprising encoded patient information and further adapted to image an attribute of the medication package. During a subsequent fine gain control period, the gain of a programmable gain amplifier is adjusted separately for each frequency band used by the OFDM symbols based on a histogram bin that counts the number of output samples of an analog to digital converter whose magnitude falls within certain ranges. Formed over side faces of the semiconductor pillars and over a side face of the dummy pillar via the gate insulating films, gate electrodes fill gaps between the semiconductor pillars and a gap between the particular semiconductor pillar and the dummy pillar. In the image forming apparatus, the validating unit validates, provided that first identifier information set from the IC card matches the second identifier information set in the storage unit, the holder of the IC card by reusing the second security information set in the storage unit when the first security information is requested using the IC card.