The present invention relates to a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed by covering wiring primarily made of a copper film, and to a method of manufacturing the same. Each elementary capacitor is made up of two plates namely: a plate fixed with respect to the rest of the microcomponent; and a second plate, part of which is capable of being displaced with respect to the first fixed plate due to the effect of a control signal, so as to vary the value of the capacitance of the elementary capacitor C1. The semiconductor substrate is etched to form a first trench having a first depth using the trench etch mask as a shield. In enhanced modes, the polymeric or thermoplastic material may also be placed within the interior of a conical spring, to provide additional stability and absorption and dissipation of forces.