Embodiments of the present invention relate to a surface preparation treatment for the formation of thin films of high k dielectric materials over substrates. The verification step can be conducted manually. A baseband processor communicates with the first and the second media access controllers. under an inert atmosphere; and thermal heating the self-cross-linked aromatic polyimide polymer membrane at a temperature from about 350\xb0 to 500\xb0 C. The FSM receives the binary output from the comparator and generates a digital word, during a clock cycle, based on the target operating state of the digital linear voltage regulator and on the binary output. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers.