In accordance with illustrative embodiments, methods and apparati, which determine jitter are described. The semiconductor device also includes a silicon nitride film 12 and a silicon nitride film 10 arranged on the silicon nitride film 12. The piston has at least one upright extension member extending upwardly from the lower portion. The method may further include opening a receive window to listen for the transmission for an amount of time equal to the set receive window duration. The wireless access point may include a middleware layer for performing a variety of RFID data processing functions. A method for fabricating sourcedrain electrodes of a TFT is also disclosed.