A conveyor for moving hot material at temperatures on this order of 1000\xb0 F. The method may be used to reduce the array voltage threshold in a DRAM circuit by compensating the sourcedrain ion implantation by calculating a predicted array voltage threshold. The method is performed in such a way as to obtain cavities or reliefs sized and arranged so as to bestow upon the transparent substrate anti-reflection properties, so as to increase the percentage of radiation transmitted by the transparent substrate at the wavelengths at which said anti-reflection properties are manifested.