A semiconductor device includes a substrate having first and second regions on a surface thereof, a first conductivity type first MISFET formed in the first region and a second conductivity type second MISFET formed in the second region. In the Chemical Formula 1, M is selected from Ir, Pt, Rh, Re, and Os, and m is 2, provided that m is 1 when M is Pt. Image processing is performed based on at least one of the reflected inspection beam and the transmitted inspection beam, thus producing an inspected image of the inspected object.