A method for anisotropically plasma etching a semiconductor wafer is disclosed. The clear coat layer is formed from a clear coat composition that comprises a crosslinkable carbamate-functional resin and an aminoplast. Each of the first plurality of hinges is generally parallel to the axis such that the strip is foldable along the first plurality of hinges between a first open configuration and a second closed configuration wherein the strip of material defines the raceway. In the second tool, the blades are preferably angled with respect to each other between about 45\xb0. An ion bombardment utilizing Ar, He, O2, CHF3 or mixture thereof is performed to convert the exposed HfO2-containing gate dielectric to an intergraded layer, and a wet chemical is utilized to remove the intergraded layer.