In a semiconductor integrated circuit device according to the present invention, a polycrystalline silicon film is formed along an inner wall of a trench in which a capacitor is to be formed, and the polycrystalline silicon film and a lower electrode is contacted to each other on the entire inner wall of the trench. The saving is substantial as the current sensors will not drain a current when the AC outlets are disconnected from a load or when the load is switched off. At the stage in the design process where early-mode violations are addressed, placement, late-mode timing closure, routing, and detailed electrical and timing analysis are assumed to have been completed.