Methods are provided for fabricating FinFETs that avoid thickness uniformity problems across a die or a substrate. First and second channel regions are disposed between the anode terminal and the cathode terminal of the device, and an electrical input terminal and an electrical output terminal are coupled to opposite ends of the first channel region. Exposing the surface to a liquid solution or gaseous precursor containing silane seals the defects without causing an overall thickness change. A related method of use also is provided. Thus, a game image in which the form of the letters is changed depending upon the distance between the player object and the message generating object is displayed.